au.\*:("MALOBABIC, Slavica")
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Analytic solution of the channel potential in undoped symmetric dual-gate MOSFETsORTIZ-CONDE, Adelmo; GARCIA-SANCHEZ, Francisco J; MALOBABIC, Slavica et al.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 7, pp 1669-1672, issn 0018-9383, 4 p.Article
Bidirectional Devices for Automotive-Grade Electrostatic Discharge ApplicationsSALCEDO, Javier A; HAJJAR, Jean-Jacques; MALOBABIC, Slavica et al.IEEE electron device letters. 2012, Vol 33, Num 6, pp 860-862, issn 0741-3106, 3 p.Article
Analysis of Safe Operating Area of NLDMOS and PLDMOS Transistors Subject to Transient StressesMALOBABIC, Slavica; SALCEDO, Javier A; HAJJAR, Jean-Jacques et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 10, pp 2655-2663, issn 0018-9383, 9 p.Article
NLDMOS ESD Scaling Under Human Metal Model for 40-V Mixed-Signal ApplicationsMALOBABIC, Slavica; SALCEDO, Javier A; HAJJAR, Jean-Jacques et al.IEEE electron device letters. 2012, Vol 33, Num 11, pp 1595-1597, issn 0741-3106, 3 p.Article